1999. 11. 30
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SEMICONDUCTOR
TECHNICAL DATA
MPSA92/93
EPITAXIAL PLANAR PNP TRANSISTOR
Revision No : 3
HIGH VOLTAGE APPLICATION.
TELEPHONE APPLICATION.
FEATURES
Complementary to MPSA42/43.
MAXIMUM RATING (Ta=25 )
TO-92
DIM
MILLIMETERS
A
B
C
D
F
G
H
J
K
L
4.70 MAX
4.80 MAX
3.70 MAX
0.45
1.00
1.27
0.85
0.45
14.00 0.50
0.55 MAX
2.30
D
1 2
3
B
A
J
K
G
H
F
F
L
E
C
E
C
M
N
0.45 MAX
M
1.00
N
1. EMITTER
3. COLLECTOR
2. BASE
+
_
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector-Base
Breakdown Voltage
MPSA92
V
(BR)CBO
I
C
=-100 A, I
E
=0
-300
-
-
V
MPSA93
-200
-
-
Collector-Emitter
Breakdown Voltage
MPSA92
V
(BR)CEO
I
C
=-1.0mA, I
B
=0
-300
-
-
V
MPSA93
-200
-
-
Collector Cut-off
Current
MPSA92
I
CBO
V
CB
=-300V, I
E
=0
-
-
-0.25
A
MPSA93
V
CB
=-150V, I
E
=0
-
-
-0.25
Emitter Cut-off Current
I
EBO
V
EB
=-3V, I
C
=0
-
-
-0.1
A
DC Current Gain
* h
FE
I
C
=-1.0mA, V
CE
=-10V
25
-
-
I
C
=-10mA, V
CE
=-10V
40
-
-
I
C
=-30mA, V
CE
=-10V
25
-
-
Collector-Emitter Saturation Voltage
* V
CE(sat)
I
C
=-20mA, I
B
=-2.0mA
-
-
-0.5
V
Base-Emitter Saturation Voltage
* V
BE(sat)
I
C
=-20mA, I
B
=-2.0mA
-
-
-0.9
V
Transition Frequency
f
T
V
CE
=-20V, I
C
=-10mA, f=100MHz
50
-
-
MHz
Collector Output
Capacitance
MPSA92
C
ob
V
CB
=-20V, I
E
=0, f=1MHz
-
-
6.0
pF
MPSA93
-
-
8.0
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base
Voltage
MPSA92
V
CBO
-300
V
MPSA93
-200
Collector-Emitter
Voltage
MPSA92
V
CEO
-300
V
MPSA93
-200
Emitter-Base Voltage
V
EBO
-5.0
V
Collector Current
I
C
-500
mA
Emitter Current
I
E
500
mA
Collector Power Dissipation
P
C
625
mW
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
*Pulse Test : Pulse Width 300 S, Duty Cycle 2%
1999. 11. 30
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MPSA92/93
Revision No : 3
TRANSITION FREQUENCY f (MHz)
0
T
-30
-10
-3
-1
COLLECTOR CURRENT I (mA)
C
f - I
C - V
R
REVERSE VOLTAGE V (V)
-0.1
-0.3
-1
-3
ob
1
COLLECTOR OUTPUT CAPACITANCE
SATURATION VOLTAGE
0
BE(sat),
-30
-10
-3
-1
COLLECTOR CURRENT I (mA)
C
V V - I
h - I
C
COLLECTOR CURRENT I (mA)
-1
-3
-10
-30
300
FE
DC CURRENT GAIN h
10
I - V
CE
COLLECTOR-EMITTER VOLTAGE V (V)
-3
-5
-10
-30
C
-5
COLLECTOR CURRENT I (mA)
ob
R
C (pF)
-10
-30
-100 -300 -1k
3
5
10
30
50
100
C
ib
ob
C
T
C
-100
-5
-50
30
50
100
T =25 C
V =20VDC
j
CE
BE(sat) ,
C
V V (V)
-100
-5
-50
-0.2
-0.4
-0.6
-0.8
-1.0
V
I /I =10
V
BE(sat)
C
B
CE(sat)
CE(sat)
FE
C
-100
-5
-50
100
30
50
T =125 C
j
j
T =25 C
j
T =-55 C
CE
V =10VDC
C
CE
-50
-100
-300
-10
-30
-50
-100
-300
-500
1.5 W
AT
T T
HE
RM
AL
LIM
ITA
TIO
N Tc=
25 C
625
mW
THERM
AL
LIMIT
AT
ION
Ta=25
C
BONDING WIRE LIMITATION
SECOND BREAK DOWN
LIMITATION T =150 C
j
100
S
1.0
mS
DC
MPSA93
MPSA92
CE(sat)
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